METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH SADDLE TYPE TRANSISTOR

摘要

PURPOSE: A method for manufacturing a semiconductor device with a saddle type transistor is provided to improve production yield by preventing the short between a gate electrode and a land plug contact. CONSTITUTION: An active area(30A) of a region for a gate and an element isolation film(31) are etched respectively. A recess portion is formed on the region for gate. The gate(32) is formed on the groove. A sacrificial film spacer is formed on the sidewall of the gate. The element isolation film is exposed to the outside by the sacrificing layer spacer. The element isolation film is recessed to the predetermined depth. The sacrificing layer spacer is removed.