FLASH MEMORY DEVICE AND PROGRAMMING METHOD THEREOF

摘要

PURPOSE: A flash memory device and a program method thereof are provided to control a voltage level of a pass voltage for a program operation by applying the pass voltage of various voltage levels. CONSTITUTION: A memory cell array(65) has memory cells. A high voltage generator(55) generates a first pass voltage supplied to a memory cell array in a program operation. An SI controller(50) controls a high voltage generator for stepwise variation of the first pass voltage for the program operation.