发明名称 PLASMA PROCESSING APPARATUS
摘要 <p>A plasma processing apparatus for processing a substrate by use of plasma.  The plasma processing apparatus comprises a processing container; a mounting stage which is located in the processing container and on which a substrate is mounted; a gas shower head comprising a conductive member which is opposed to the mounting stage and the lower surface of which has a multiplicity of gas discharging apertures for supplying a processing gas into the processing container; an induction coil to which a high frequency current is supplied so as to generate an inductive coupling plasma in a region surrounding a space below the gas shower head; a negative voltage supplying means for applying a negative DC voltage to the gas shower head so as to lead an electrical field, which is inducted by the induction coil, to a central portion of the processing region; and a means for evacuating the processing container.</p>
申请公布号 WO2010004997(A1) 申请公布日期 2010.01.14
申请号 WO2009JP62378 申请日期 2009.07.07
申请人 TOKYO ELECTRON LIMITED;SAWADA IKUO;KANG SONGYUN;KASAI SHIGERU 发明人 SAWADA IKUO;KANG SONGYUN;KASAI SHIGERU
分类号 H01L21/3065;H05H1/46 主分类号 H01L21/3065
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