发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
<p>A plasma processing apparatus for processing a substrate by use of plasma. The plasma processing apparatus comprises a processing container; a mounting stage which is located in the processing container and on which a substrate is mounted; a gas shower head comprising a conductive member which is opposed to the mounting stage and the lower surface of which has a multiplicity of gas discharging apertures for supplying a processing gas into the processing container; an induction coil to which a high frequency current is supplied so as to generate an inductive coupling plasma in a region surrounding a space below the gas shower head; a negative voltage supplying means for applying a negative DC voltage to the gas shower head so as to lead an electrical field, which is inducted by the induction coil, to a central portion of the processing region; and a means for evacuating the processing container.</p> |
申请公布号 |
WO2010004997(A1) |
申请公布日期 |
2010.01.14 |
申请号 |
WO2009JP62378 |
申请日期 |
2009.07.07 |
申请人 |
TOKYO ELECTRON LIMITED;SAWADA IKUO;KANG SONGYUN;KASAI SHIGERU |
发明人 |
SAWADA IKUO;KANG SONGYUN;KASAI SHIGERU |
分类号 |
H01L21/3065;H05H1/46 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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