SEMICONDUCTOR MEMORY AND FABRICATION PROCESS OF SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory which can satisfy the drain disturb characteristics and minimize a decline of current in electron injection state. SOLUTION: A semiconductor memory includes a P-type semiconductor substrate 2 having a trench 24, source-side N-diffusion layer 44S and N+diffusion layer 42S, and drain-side N-diffusion layer 44D and N+diffusion layer 42D formed on the surface of the P-type semiconductor substrate 2 at a part not having the trench 24, a gate oxide film 12 covering the sidewall and bottom of the trench 24 and the surfaces of the N-diffusion layers 44S, 44D and the N+diffusion layers 42S, 42D, a gate electrode 14 formed on the surface of the gate oxide film 12 to fill the trench 24 in the shape of a grid in the continuous direction of the trench 24, a nitride film 8 formed in the shape of a spacer with the gate oxide film 12 interposed between the gate electrode 14 and itself in a region of the surface at the sidewall of the trench 24 which faces the N-diffusion layer 44S, 44D with at least the gate oxide film 12 interposed therebetween, and a gate backing interconnect 10 formed to touch the gate electrode 14 directly. COPYRIGHT: (C)2010,JPO&INPIT