发明名称 LASER BEAM MACHINING METHOD OF Si SUBSTRATE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a laser beam machining method of an Si substrate, wherein a protective film is hardly peeled off during laser irradiation, the substrate is surely protected from adhesion of debris, and the high yield and reliability are maintained. <P>SOLUTION: The laser beam machining method of an Si substrate includes: a process of forming a protective film 2 of a thickness≤250 nm on the surface of a mono-crystal Si substrate 1 by coating with a spin coater an aqueous solution of hydrophilic resin such as polyvinyl alcohol and polyvinyl pyrrolidone; a process of boring by irradiating the Si substrate 1 with a pulsed laser beam 3 through the protective film 2, and a process of removing the protective film 2 by dissolving in a solvent like pure water. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010005629(A) 申请公布日期 2010.01.14
申请号 JP20080164233 申请日期 2008.06.24
申请人 MITSUBISHI ELECTRIC CORP 发明人 KATSURA TOMOTAKE;YOSHIDA YASUHIRO;FUJIKAWA SHUICHI;OKAMOTO TATSUKI
分类号 B23K26/38;B23K26/00;B23K26/16 主分类号 B23K26/38
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