发明名称 ELECTROSTATIC DISCHARGE PROTECTION OF SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes a pads for receiving a reference voltage and input signals from an external device, a unit gain buffer for receiving the reference voltage as an input, input buffers for identifying a corresponding one of the input signals based on an internal reference voltage outputted from the unit gain buffer, external electrostatic discharge protectors connected to a transmission path of the reference voltage and transmission paths of input signals, and internal electrostatic discharge protectors connected to the transmission path of the reference voltage and the transmission paths of the input signals.
申请公布号 US2010008001(A1) 申请公布日期 2010.01.14
申请号 US20080347503 申请日期 2008.12.31
申请人 HYNIX SEMICONDUCTOR, INC. 发明人 DO CHANG-HO
分类号 H02H9/04 主分类号 H02H9/04
代理机构 代理人
主权项
地址