发明名称 |
OXYGEN AND CARBON DIOXIDE SENSING |
摘要 |
<p>A high electron mobility transistor (HEMT) capable of performing as a CO2 or O2 sensor is disclosed. In one implementation, a polymer solar cell can be connected to the HEMT for use in an infrared detection system. In a second implementation, a selective recognition layer can be provided on a gate region of the HEMT. For carbon dioxide sensing, the selective recognition layer can be, in one example, PEI/starch. For oxygen sensing, the selective recognition layer can be, in one example, indium zinc oxide (IZO). In one application, the HEMTs can be used for the detection of carbon dioxide and oxygen in exhaled breath or blood.</p> |
申请公布号 |
WO2009137768(A3) |
申请公布日期 |
2010.01.14 |
申请号 |
WO2009US43296 |
申请日期 |
2009.05.08 |
申请人 |
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.;REN, FAN;PEARTON, STEPHEN, JOHN |
发明人 |
REN, FAN;PEARTON, STEPHEN, JOHN |
分类号 |
G01N27/12;G01N33/497;H01L21/02 |
主分类号 |
G01N27/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|