发明名称 |
PHOTOSENSITIVE POLYORGANOSILOXANE COMPOSITION, POLYORGANOSILOXANE-CURED RELIEF PATTERN AND METHOD FOR FORMING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photosensitive polyorganosiloxane composition which has excellent wettability when applied onto an organic thin film, excellent photosensitive properties when received UV-i light and excellent adhesiveness to the organic thin film and which is curable at low temperature, and to provide a polyorganosiloxane-cured relief pattern formed by using the photosensitive polyorganosiloxane composition, a method for forming the polyorganosiloxane-cured relief pattern, a semiconductor device and a method for producing the semiconductor device. <P>SOLUTION: The photosensitive polyorganosiloxane composition includes (a) 100 parts mass polysiloxane obtained by polymerizing a silanol compound having a specific structure and an alkoxysilane compound having another specific structure in the presence of a catalyst without adding water, (b) 0.2-20 parts mass photopolymerization initiator, (c) 0.01-10 parts mass nonionic surfactant and (d) 10-150 parts mass at least one organic solvent selected from compounds each having an alcoholic hydroxy group and ketone compounds. <P>COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010006982(A) |
申请公布日期 |
2010.01.14 |
申请号 |
JP20080169038 |
申请日期 |
2008.06.27 |
申请人 |
ASAHI KASEI E-MATERIALS CORP |
发明人 |
KIMURA MASASHI;HIRATA TATSUYA |
分类号 |
C08F290/14;C08G77/20;C08G77/26;G03F7/004;G03F7/075;G03F7/40;H01L21/027;H01L23/02 |
主分类号 |
C08F290/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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