Silicon avalanche photodetector array with graded doping concentration

摘要

Invention relates to detectors with high efficiency of light emission detection, and can be used in nuclear and laser technology, and also in technical and medical tomography etc. Silicon photoelectric multiplier (embodiment 1) comprises p ++ conductance type substrate having 10 18 - 10 20 cms -3 of doping agent concentration, and consists of cells, each cell includes p conductance type epitaxial layer having 10 18 - 10 14 cms -3 of doping agent concentration varied gradiently, said layer grown on substrate,
p conductance type layer having 10 15 - 10 17 cms -3 of doping agent concentration, n + conductance type layer having 10 18 - 10 20 cms -3 of doping agent concentration, polyilicon resistor is located on silicon oxide layer in each cell, said polysilicon resistor connecting n + conductance type layer with voltage distribution bus, and separating elements are disposed between cells. Silicon photoelectric multiplier (embodiment 2) comprises n- conductance type substrate, p ++ conductance type layer having 10 18 - 10 20 cms - 3 of doping agent concentration, said layer applied on substrate, said multiplier consists of cells, polysilicon resistor is located in each cell on silicon oxide layer, and separating elements are disposed between cells.