发明名称 CONDUCTIVE VIA FORMATION
摘要 <p>A method involves depositing a first electrically conductive material, using a deposition technique, into a via formed in a material, the via having a diameter at a surface of the material of less than about 10 mum and a depth of greater than about 50 mum, so as to form a seed layer within the via, then creating a thickening layer on top of the seed layer by electrolessly plating the seed layer with a second electrically conductive material without performing any activation process within the via between via formation and the creating the thickening layer, and then electroplating a conductor metal onto the thickening layer until a volume bounded by the thickening layer within the via is filled with the conductor metal.</p>
申请公布号 EP2142683(A2) 申请公布日期 2010.01.13
申请号 EP20080762929 申请日期 2008.06.19
申请人 CUFER ASSET LTD. L.L.C. 发明人 TREZZA, JOHN
分类号 C23C18/16;C23C18/18;C23C18/31;C25D5/02;C25D7/12 主分类号 C23C18/16
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