| 摘要 |
<p>PURPOSE: A thin film transistor, a manufacturing method thereof, and an organic electroluminescent display device are provided to improve yield by preventing arc in a multi crystal silicon layer. CONSTITUTION: A thin film transistor includes a substrate(100), a buffer layer(110), a semiconductor layer(120), and a gate insulation layer(130), a gate electrode(140), an interlayer insulation layer(150), and a source/drain electrode(160d,160s). The buffer layer is positioned on the substrate. The semiconductor layer is positioned on the buffer layer. The gate insulation layer is positioned on the semiconductor layer. The gate electrode is arranged on the gate insulation layer. A source/drain electrode is electrically connected to the semiconductor layer through the same metal layer as the gate electrode.</p> |
