发明名称 |
Dry etchback of interconnect contacts |
摘要 |
A method and structure for a composite stud contact interface with a decreased contact resistance and improved reliability. A selective dry etch is used which comprises a fluorine containing gas. The contact resistance is reduced by partially dry-etching back the tungsten contact after or during the M1 RIE process. The recessed contact is then subsequently metalized during the M1 liner/plating process. The tungsten contact height is reduced after it has been fully formed.
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申请公布号 |
US7645700(B2) |
申请公布日期 |
2010.01.12 |
申请号 |
US20070946922 |
申请日期 |
2007.11.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
STANDAERT THEODORUS E;BREARLEY WILLIAM H;GRECO STEPHEN E;SANKARAN SUJATHA |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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