| 摘要 |
The invention relates to obtaining of crystal scintillation materials, which are used in electronic and nuclear instrument-making in structure of detectors of ionizing radiations. A method for heat treatment of activated crystals of zinc selenide comprises the preliminary annealing of crystals in hydrogen at the temperature of 150-250 °C during 8-10 hours and further annealing of crystals in saturated zinc vapor at the temperature of 950-1000 °C during 24-48 hours with further two-stage cooling at first to the temperature of 600±10 °C with rate 100±10 °C/minute, then to the room temperature with rate 2-3 °C/minute. A method allows to improve scintillation characteristics material – to increase light output, to increase speed, to improve uniformity, and also to increase reproduction of these characteristics. |
