SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element having a gate pattern disposed below a body region, and to provide a semiconductor substrate.

SOLUTION: A semiconductor element 300 includes the semiconductor substrate 310, the gate pattern 330 disposed on the semiconductor substrate 310, the body region 370 disposed on a gate insulating region 360 on the gate pattern 330, and a first impurity doping region 340 and a second impurity doping region 350 disposed on the body region 370. A shield insulating region 380 is disposed between the first impurity doping region 340 and the second impurity doping region 350.

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