THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME, AND FLAT PANEL DISPLAY DEVICE HAVING THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor that uses an oxide semiconductor as an active layer, to provide a method of manufacturing the same, and to provide a flat panel display device having the thin film transistor. SOLUTION: The thin film transistor includes: an oxide semiconductor layer formed on a substrate and having a channel region, a source region, and a drain region; a gate electrode insulated from the oxide semiconductor layer by a gate insulating layer; an ohmic contact layer formed on the source region and the drain region of the oxide semiconductor layer; and a source electrode and a drain electrode respectively coupled to the source region and the drain region through the ohmic contact layer, wherein the ohmic contact layer is formed of a metal having a lower work function than work functions of the source electrode and the drain electrode. COPYRIGHT: (C)2010,JPO&INPIT