SYSTEM AND METHOD TO FABRICATE MAGNETIC RANDOM ACCESS MEMORY
摘要
<p>A system and method to fabricate magnetic random access memory is disclosed. In particular, a method of aligning a magnetic film during deposition is disclosed. The method includes applying a first magnetic field along a first direction (130) in a region in which a substrate resides during a deposition of a first magnetic material onto the substrate. The method further includes applying a second magnetic field (132) along a second direction in the region during the deposition of the first magnetic material onto the substrate.</p>
申请公布号
WO2010002632(A1)
申请公布日期
2010.01.07
申请号
WO2009US48248
申请日期
2009.06.23
申请人
QUALCOMM INCORPORATED;LI, XIA;ZHU, XIAOCHUN;KANG, SEUNG, H.