发明名称 SYSTEM AND METHOD TO FABRICATE MAGNETIC RANDOM ACCESS MEMORY
摘要 <p>A system and method to fabricate magnetic random access memory is disclosed. In particular, a method of aligning a magnetic film during deposition is disclosed. The method includes applying a first magnetic field along a first direction (130) in a region in which a substrate resides during a deposition of a first magnetic material onto the substrate. The method further includes applying a second magnetic field (132) along a second direction in the region during the deposition of the first magnetic material onto the substrate.</p>
申请公布号 WO2010002632(A1) 申请公布日期 2010.01.07
申请号 WO2009US48248 申请日期 2009.06.23
申请人 QUALCOMM INCORPORATED;LI, XIA;ZHU, XIAOCHUN;KANG, SEUNG, H. 发明人 LI, XIA;ZHU, XIAOCHUN;KANG, SEUNG, H.
分类号 H01L43/08;C23C14/35;H01F41/18;H01J37/34;H01L43/12 主分类号 H01L43/08
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