| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a semiconductor thin film such that when the semiconductor thin film is formed using crystallization by laser annealing, the crystallinity thereof is evaluated with higher precision than before. SOLUTION: In an inspection step for the crystallinity of a p-Si film 23, the p-Si film 23 and an a-Si film 230 are each irradiated with irradiation light Lout by an LED 12. Consequently, a transmission image (transmission image data D1) of the p-Si film 23 and a-Si film 230 is obtained. Further, an image-processing computer 15 determines a transmission contrast between the transmission luminance of the p-Si film 23 (a crystallized region 51) and the transmission luminance of the a-Si film 230 (a non-crystallized region 50). On the basis of the determined transmission contrast, screening of the p-Si film 23 is performed. Consequently, securer screening than before is achieved. COPYRIGHT: (C)2010,JPO&INPIT |
