| 摘要 |
PURPOSE: A method for forming a contact plug of a semiconductor device is provided to prevent the formation of oxide film on the surface of a contact plug by performing a heat treatment process after forming an anti-oxidizing film on the surface of the contact plug. CONSTITUTION: In a device, a first insulating film(118) is formed on a semiconductor substrate. A first contact plug(120) is formed in a first insulating film. A second insulating film(122) is formed on the first contact plug and the first insulating film. The first and the second contact holes are formed in the second insulating film. The impurity ion injection is process on a junction area which is exposed by second contact hole. An oxidation blocking film is formed on the surface of the first contact plug through the first heat treatment. Impurity ions inserted in the junction area are activated through the second heat treatment process. A second contact plug(124) is formed in the first and the second contact hole.
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