| 摘要 |
PURPOSE: A sense amplifier driving circuit for semiconductor memory apparatus is provided to guarantee the stable operation by controlling the pulse length of the overdrive signal. CONSTITUTION: The exterior voltage sensor(100) generates the sensing signal by comparing the level of the reference voltage and exterior voltage. The pulse length control block(200) receives the sense amp enable signal and sensing signal. The overdrive signal having the pulse length which the pulse length control block is varied according to the enable state of the sensing signal is outputted. The sense amp driver(10) supplies the exterior voltage in response to the overdrive signal to the sense amplifier. The exterior voltage sensor generates the sensing signal enabled according to the level of the exterior voltage and the disabled sensing signal to the selection base. |
