发明名称 COLUMN ADDRESS TRANSFER CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME
摘要 PURPOSE: A column address transfer circuit and semiconductor memory device using the same are provided to control the enable section of the first and the second bank accesses signal. CONSTITUTION: The column address transfer circuit is composed of the bank accesses signal processing unit(4), column address latch(5), and the first bank(6) and the second bank(7). The bank accesses signal processing unit generates the first and the second enable signal in response to the first and the second bank accesses signal. The column address latch selectively transfers the global column address in response to the first and the second enable signal to the first local column address or the second local column address. The first bank is activated according to the first local column address. The second bank is activated according to the second local column address.
申请公布号 KR20100001214(A) 申请公布日期 2010.01.06
申请号 KR20080061039 申请日期 2008.06.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, KEUN KOOK
分类号 G11C11/408;G11C11/407 主分类号 G11C11/408
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