发明名称 Semiconductor devices with inductors
摘要 Semiconductor devices are provided with high performance high-frequency circuits in which interference caused by inductors is reduced. In a semiconductor device including a modulator circuit to modulate a carrier wave by a base band signal to output an RF signal and a demodulator circuit to demodulate the RF signal by use of the carrier wave to gain the base band signal and a local oscillator to generate the carrier wave, inductors respectively having a closed loop wire are adopted. Interference caused by mutual inductance is reduced by the closed loop wire. For example, where inductors are adopted in the modulator circuit, a closed loop wire is disposed around the outer periphery of the inductors.
申请公布号 US7642618(B2) 申请公布日期 2010.01.05
申请号 US20050183800 申请日期 2005.07.19
申请人 RENESAS TECHNOLOGY CORP. 发明人 SHIRAMIZU NOBUHIRO;NAKAMURA TAKAHIRO;MASUDA TORU;KASA NOBUHIRO;MORI HIROSHI
分类号 H01L27/00;H01F27/28 主分类号 H01L27/00
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