| 摘要 |
A CMOS image sensor manufacturing method may include forming an interlayer insulating film over a semiconductor substrate in which a plurality of photodiodes are formed, forming a plurality of color filter layers corresponding to the photodiodes over the interlayer insulating film, forming a flattening layer over an entire surface of the semiconductor substrate including the respective color filter layers, forming gap insulating films over the flattening layer and over boundaries of the color filter layers, and forming micro-lenses over the flattening layer between the gap insulating films, to correspond to the respective photodiodes.
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