| 摘要 |
PURPOSE: An isolation film of a semiconductor device and a manufacturing method thereof are provided to reduce parasitic capacitance by forming an isolation film with low-K material. CONSTITUTION: A trench is formed to a semiconductor substrate(100). A first liner protection film is formed to an inner circumference of the trench. A low-K film pattern is formed on the first liner protection film in order to fill the trench. A recess groove is formed on the low-K film pattern, and exposes a top side wall of the first liner protection film. A second liner protection film(150) is formed inside the recess groove. Pores(140) are formed inside the isolation film.
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