| 摘要 |
PURPOSE: A method for forming a contact hole of a semiconductor device is provided to improve CD(Critical Dimension) uniformity of a contact hole by forming the contact hole through a cleaning process and an isotropic etching process. CONSTITUTION: An interlayer insulation film(202) is formed on a semiconductor substrate(200). A photoresist pattern is formed in order to expose a part of a top surface of the interlayer insulation film. The interlayer insulation film is patterned by an isotropic etching process. The isotropic etching process is performed by using the photoresist pattern as an etching mask. The photoresist pattern is removed by a stripping process. A contact hole(206) is formed by a wet cleaning process about the interlayer insulation film.
|
