发明名称 |
Optoelectronic transmitter integrated circuit and method of fabricating the same using selective growth process |
摘要 |
Provided are an optoelectronic (OE) transmitter integrated circuit (IC) and method of fabricating the same using a selective growth process. In the OE transmitter IC, a driving circuit, which includes a double heterojunction bipolar transistor (DHBT) and amplifies received electric signals to drive an electroabsorption (EA) modulator, and the EA modulator with a multi-quantum well (MQW) absorption layer are integrated as a single chip on a semi-insulating substrate. The MQW absorption layer of the EA modulator and an MQW insertion layer of the DHBT are formed to different thicknesses from each other using a selective MOCVD growth process.
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申请公布号 |
US7638856(B2) |
申请公布日期 |
2009.12.29 |
申请号 |
US20070872137 |
申请日期 |
2007.10.15 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
NAM EUN SOO;KIM YONG WON;HONG SEON EUI;OH MYUNG SOOK;KIM BO WOO |
分类号 |
H01L29/00 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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