发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor apparatus that improves adhesion between an electrode on a ferroelectric and a conductive plug connected to the same. SOLUTION: The method of manufacturing a semiconductor apparatus 1 includes: a step of forming a first conductive film 40a on a substrate 10; a step of forming a ferroelectric film 41a on the first conductive film 40a; a step of forming a second conductive film 42a on the ferroelectric film 41a; a step of forming a hard mask 100 including a metal on the second conductive film 42a; a step of removing a region not covered by the hard mask 100 of the second conductive film 42a with remaining a region under the hard mask 100 of the second conductive film 42a; and a step of removing the hard mask 100 and a surface layer of the second conductive film 42a under the hard mask 100 by dry etching. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009302404(A) 申请公布日期 2009.12.24
申请号 JP20080157086 申请日期 2008.06.16
申请人 FUJITSU MICROELECTRONICS LTD 发明人 KIUCHI KENJI
分类号 H01L21/8246;H01L27/105 主分类号 H01L21/8246
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