发明名称 |
MANUFACTURING METHOD OF NITRIDE SUBSTRATE, NITRIDE SUBSTRATE, AND NITRIDE-BASED SEMICONDUCTOR DEVICE |
摘要 |
A manufacturing method of a nitride substrate includes the steps of preparing a ground substrate; forming a mask on the ground substrate; placing the ground substrate in a reactor, and heating the ground substrate to a temperature of 850° C. to 1100° C. In the step of heating the ground substrate, HCl and NH3 are supplied into the reactor so that partial pressure PHCl satisfies (1.5+0.0005 p) kPa<=PHCl>=(4+0.0005 p) kPa and partial pressure PNH3 satisfies (15-0.0009 p) kPa<=PNH3>=(26-0.0017 p) kPa, whereby an AlxGayIn1-x-yN crystal (0>=x<1, 0<y>=1) is grown, and whereby a ridge-volley structure including a plurality of ridges and valleys parallel to one another is formed. The AlxGayIn1-x-yN crystal is grown so that the ridge-valley structure is not buried while a height of the volleys from the ground substrate is allowed to exceed 2.5 (p-s).
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申请公布号 |
US2009315149(A1) |
申请公布日期 |
2009.12.24 |
申请号 |
US20080141266 |
申请日期 |
2008.06.18 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
OKAHISA TAKUJI;NAKAHATA HIDEAKI;UEMATSU KOJI |
分类号 |
H01L29/20;C30B25/00;H01L31/20 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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