发明名称 PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD
摘要 <p>A plasma processing apparatus is characterized by being provided with a process container capable of maintaining an atmosphere the pressure of which is reduced below the atmospheric pressure, an evacuation means for reducing the pressure in the process container to a predetermined pressure, a gas introducing means for introducing a process gas into the process container, a microwave introducing means for introducing a microwave into the process container, and a lifter pin for supporting an object to be processed on the end surface thereof, which is ascendably and descendably inserted into a mounting table provided in the process container, wherein when plasma is ignited by introducing the microwave, the object to be processed is supported at a first position near the upper surface of the mounting table by the lifter pin, and after the plasma is ignited, the object to be processed is supported at a second position remoter from the mounting table than the first position by the lifter pin.  An improvement in plasma ignition rate can be achieved.</p>
申请公布号 WO2009150968(A1) 申请公布日期 2009.12.17
申请号 WO2009JP60124 申请日期 2009.06.03
申请人 SHIBAURA MECHATRONICS CORPORATION;NITTA, HIDEYUKI;HOSONO, TAKASHI;MINATO, TAKEFUMI;KASE, YOSHIHISA;MUTO, MAKOTO 发明人 NITTA, HIDEYUKI;HOSONO, TAKASHI;MINATO, TAKEFUMI;KASE, YOSHIHISA;MUTO, MAKOTO
分类号 H01L21/3065;H05H1/46 主分类号 H01L21/3065
代理机构 代理人
主权项
地址