发明名称 |
PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD |
摘要 |
<p>A plasma processing apparatus is characterized by being provided with a process container capable of maintaining an atmosphere the pressure of which is reduced below the atmospheric pressure, an evacuation means for reducing the pressure in the process container to a predetermined pressure, a gas introducing means for introducing a process gas into the process container, a microwave introducing means for introducing a microwave into the process container, and a lifter pin for supporting an object to be processed on the end surface thereof, which is ascendably and descendably inserted into a mounting table provided in the process container, wherein when plasma is ignited by introducing the microwave, the object to be processed is supported at a first position near the upper surface of the mounting table by the lifter pin, and after the plasma is ignited, the object to be processed is supported at a second position remoter from the mounting table than the first position by the lifter pin. An improvement in plasma ignition rate can be achieved.</p> |
申请公布号 |
WO2009150968(A1) |
申请公布日期 |
2009.12.17 |
申请号 |
WO2009JP60124 |
申请日期 |
2009.06.03 |
申请人 |
SHIBAURA MECHATRONICS CORPORATION;NITTA, HIDEYUKI;HOSONO, TAKASHI;MINATO, TAKEFUMI;KASE, YOSHIHISA;MUTO, MAKOTO |
发明人 |
NITTA, HIDEYUKI;HOSONO, TAKASHI;MINATO, TAKEFUMI;KASE, YOSHIHISA;MUTO, MAKOTO |
分类号 |
H01L21/3065;H05H1/46 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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