| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing pad with which variation of processing speed becomes smaller than permitted variation ratio if rotation speed of the polishing pad is set within a range of 25-150 rpm which is the normally used rotation speed, to provide an electrolytic compound polishing device, and to provide an electrolytic compound polishing method. <P>SOLUTION: The polishing pad 101 has a through-hole to be installed on the opposite electrode of the electrolytic compound polishing device used for electrolytic compound polishing of a metal film on the substrate surface, and is characterized in that a hole diameter D of the through-hole 101a is within a range of 0.1-5 mm, a thickness h is within a range of 0.5-5 mm, and square of the hole diameter/thickness (D<SP>2</SP>/h) is within a range of 0.002-50 mm. <P>COPYRIGHT: (C)2010,JPO&INPIT |
