| 摘要 |
A semiconductor integrated circuit device and a method of fabricating the same for increasing channel length while permitting the channel to remain stable. The semiconductor integrated circuit device includes a semiconductor substrate with lightly-doped impurity regions, a gate stack, and offset spacers. The gate stack includes an insulating layer formed on the semiconductor substrate and a gate electrode formed on the gate insulating layer. The offset spacers are formed of an insulating material having high dielectric constant on both sidewalls of the gate stack.
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