DOMAIN WALL DISPLACEMENT TYPE MEMORY DEVICE

摘要

<P>PROBLEM TO BE SOLVED: To provide a domain wall displacement type memory device that avoids a decrease in reliability of recording/reproduction of information due to shape processing to a metal thin wire. Ž<P>SOLUTION: The domain wall displacement type memory device includes: a memory line which is formed of a ferromagnetic material and extends linearly and in which sections which can be magnetized in any of two different magnetization directions are arrayed across singular points which have relatively large crystal magnetic anisotropy by forming the singular points at predetermined intervals; a recording element which applies a magnetic field to one recording section among the sections to magnetize the recording section in one optional magnetization direction between the two magnetization directions; a read element which detects the magnetization direction of one read section among the sections; and a current path which makes a current flow to the memory line and displaces a magnetic domain wall formed between two adjacent sections magnetized in directions different from each other, by a distance equivalent to one section. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž