发明名称 |
SINGLE PHOTON DETECTION WITH SELF-QUENCHING MULTIPLICATION |
摘要 |
A photoelectronic device and an avalanche self-quenching process for a photoelectronic device are described. The photoelectronic device comprises a nanoscale semiconductor multiplication region and a nanoscale doped semiconductor quenching structure including a depletion region and an undepletion region. The photoelectronic device can act as a single photon detector or a single carrier multiplier. The avalanche self-quenching process allows electrical field reduction in the multiplication region by movement of the multiplication carriers, thus quenching the avalanche.
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申请公布号 |
US2009309648(A1) |
申请公布日期 |
2009.12.17 |
申请号 |
US20090370066 |
申请日期 |
2009.02.12 |
申请人 |
ZHENG XINYU;CUNNINGHAM THOMAS J;PAIN BEDABRATA |
发明人 |
ZHENG XINYU;CUNNINGHAM THOMAS J.;PAIN BEDABRATA |
分类号 |
H01L31/0248;H01L31/00 |
主分类号 |
H01L31/0248 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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