| 摘要 |
Methods of forming alloys of zinc oxide, such as alloys including silver (Ag) and/or gold (Au) with atomic fractions greater than about 1% are provided. Devices, such as opto-electronic devices (e.g., light-emitting diodes, laser diodes) and electronic devices (e.g., field-effect transistors, high-electron mobility transistors, heterojunction bipolar transistors), may include one or more of the zinc oxide alloys. |
