| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide conductive film whose area can be increased and which has low resistivity. <P>SOLUTION: An n-type GaN system semiconductor layer 2, an active layer 3, a p-type GaN system semiconductor layer 4, and a ZnO system transparent conductive film 5 are formed on a sapphire substrate 1, a p electrode 6 is provided on the ZnO system transparent conductive film 5, and an n electrode 7 is provided on the surface to which a part of the n-type GaN system semiconductor layer 2 is exposed by etching. The ZnO system transparent conductive film 5 is formed by a multilayer film containing at least a set of laminates to be constituted of a Mg<SB>Y</SB>Zn<SB>1-Y</SB>O layer 5a (0<Y<1) and an Mg<SB>X</SB>Zn<SB>1-X</SB>O layer 5b (0≤X<1) arranged on the Mg<SB>Y</SB>Zn<SB>1-Y</SB>O layer 5a. In addition, these Mg compositions satisfy X<Y. <P>COPYRIGHT: (C)2010,JPO&INPIT |
