| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a memory cell having high certainty in data recording. <P>SOLUTION: A memory system 1 has: a NAND flash memory 12 having a plurality of memory cells and capable of recording data of one bit, two bits or more in one memory cell; and a duplex conversion circuit 21 for duplexing by assigning input data to a predetermined threshold level and the other threshold level different from the predetermined threshold level. Furthermore, the memory system 1 has a controller 11 for controlling to record data duplexed by the duplex conversion circuit 21 in the NAND flash memory 12. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
