| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a phase change memory device and its read method. <P>SOLUTION: A variable resistance memory device includes: a memory cell connected to a bit line; and a clamp circuit providing selectively either of first read voltage or second read voltage to the bit line according to an elapsed time from write operation of the memory cell. Even if an time interval between write operation and verification read operation is shortened, a sensing margin is secured, and a memory speed is improved by a bias method of the clamp circuit. <P>COPYRIGHT: (C)2010,JPO&INPIT |
