| 摘要 |
In view of micronizing semiconductor device and of suppressing current leakage in a shared contact allowing contact between a gate electrode and an impurity-diffused region, a semiconductor device 100 includes a first gate electrode 108, a fourth source/drain region 114b, and a shared contact electrically connecting the both, wherein in a section taken along the gate length direction, the first gate electrode 108 and the fourth source/drain region 114b are disposed as being apart from each other, an element-isolating insulating film 102 is formed over the entire surface of a semiconductor substrate 160 exposed therebetween, and the distance between the first gate electrode 108 and the fourth source/drain region 114b is made substantially equal to the width of the sidewall formed on the side face of the first gate electrode 108, when viewed in another section taken along the gate length direction.
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