发明名称 PAINT FOR FORMING POROUS METAL OXIDE SEMICONDUCTOR FILM FOR PHOTOELECTRIC CELL, AND PHOTOELECTRIC CELL
摘要 <P>PROBLEM TO BE SOLVED: To provide a paint for forming a porous metal oxide semiconductor film for photoelectric cell in which the porous metal oxide semiconductor film for photoelectric cell of a uniform thickness can be formed with a small number of times. <P>SOLUTION: The photoelectric cell has a substrate 5 which has an electrode layer 1 on the surface, has a titanium oxide thin film 7 on the electrode layer 1, and a porous metal oxide semiconductor film 2 adsorbing a photosensitize material formed on the titanium oxide thin film 7 and a substrate 6 which has an electrode layer 3 on the surface arranged so that the electrode layer 1 and the electrode layer 3 may be facing each other, an electrolyte is filled between the porous metal oxide semiconductor film 2 and the electrode layer 3. The paint for forming the semiconductor film contains a porous titanium oxide particulate aggregate of which the average particle size is in the range 0.5-10 &mu;m and the pore volume is in the range 0.1-0.8 ml/g and a non-aggregate titanium oxide particulate of which the average particle size is in the range 5-400 nm. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009289669(A) 申请公布日期 2009.12.10
申请号 JP20080142876 申请日期 2008.05.30
申请人 JGC CATALYSTS & CHEMICALS LTD 发明人 MIZUNO TAKAYOSHI;KOYANAGI TSUGUO
分类号 H01M14/00;C09D1/00;C09D5/24;C09D7/12;H01L31/04 主分类号 H01M14/00
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