发明名称 |
PAINT FOR FORMING POROUS METAL OXIDE SEMICONDUCTOR FILM FOR PHOTOELECTRIC CELL, AND PHOTOELECTRIC CELL |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a paint for forming a porous metal oxide semiconductor film for photoelectric cell in which the porous metal oxide semiconductor film for photoelectric cell of a uniform thickness can be formed with a small number of times. <P>SOLUTION: The photoelectric cell has a substrate 5 which has an electrode layer 1 on the surface, has a titanium oxide thin film 7 on the electrode layer 1, and a porous metal oxide semiconductor film 2 adsorbing a photosensitize material formed on the titanium oxide thin film 7 and a substrate 6 which has an electrode layer 3 on the surface arranged so that the electrode layer 1 and the electrode layer 3 may be facing each other, an electrolyte is filled between the porous metal oxide semiconductor film 2 and the electrode layer 3. The paint for forming the semiconductor film contains a porous titanium oxide particulate aggregate of which the average particle size is in the range 0.5-10 μm and the pore volume is in the range 0.1-0.8 ml/g and a non-aggregate titanium oxide particulate of which the average particle size is in the range 5-400 nm. <P>COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2009289669(A) |
申请公布日期 |
2009.12.10 |
申请号 |
JP20080142876 |
申请日期 |
2008.05.30 |
申请人 |
JGC CATALYSTS & CHEMICALS LTD |
发明人 |
MIZUNO TAKAYOSHI;KOYANAGI TSUGUO |
分类号 |
H01M14/00;C09D1/00;C09D5/24;C09D7/12;H01L31/04 |
主分类号 |
H01M14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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