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发明名称
Verfahren zur Herstellung eines vertikalen Transistorbauelements und vertikales Transistorbauelement
摘要
申请公布号
DE102005046480(B4)
申请公布日期
2009.12.10
申请号
DE200510046480
申请日期
2005.09.28
申请人
INFINEON TECHNOLOGIES AG
发明人
POELZL, MARTIN;RIEGER, WALTER
分类号
H01L21/336;H01L29/78
主分类号
H01L21/336
代理机构
代理人
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