| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which can enhance operation characteristics, and to provide a manufacturing method thereof. SOLUTION: The semiconductor memory device is equipped with: first and second active areas AA formed in a substrate 10; an element separation area 32 to be separated; and a memory cell having a lamination gate and a first impurity diffusion layer which functions as a source and a drain, wherein the lamination gate is provided with: a first insulating film 15 which is formed on the substrate 10 and accumulates electric charges; a second insulating film 16 which is formed on the first insulating film 15 using materials with dielectric ratio higher than that of the first insulating film 15; and a control gate electrode 17 which is formed on the second insulating film 16, the second insulating film 16 is commonly connected among a plurality of memory cells so as to cross the element separation area 32, contacts the upper surface of the element separation area 32, and the upper surface of the element separation area 32 is located higher than the bottom surface of the first insulating film 15, and equal to or lower than the upper surface of the first insulating film 15. COPYRIGHT: (C)2010,JPO&INPIT |
