| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-breakdown voltage vertical MOSFET with high channel density, capable of suppressing generation of an abnormal operation such as waveform ringing or an oscillating phenomenon without deteriorating on-resistance and switching performance, which raises avalanche resistance, and by which device destruction is hard to be generated. SOLUTION: The high-breakdown voltage vertical MOSFET is constituted, which has the surface pattern shape of a source region 3a which contacts a part of a channel 4 and does not contact all the sides in order to reduce effective channel density as controlling it so as to suppress rise of the on-resistance and increase of feedback capacity. COPYRIGHT: (C)2010,JPO&INPIT |
