发明名称 |
Structure and Method of A Field-Enhanced Charge Trapping-DRAM |
摘要 |
A field-enhanced (FE) charge trapping-DRAM (TDRAM) device is described which is suitable for DRAM applications, and for additional applications with lower power requirements. In some embodiments, the FE-TDRAM device comprises a charge trapping FinFET structure including an upside-down U-shaped volatile programmable structure and an upside-down U-shaped dielectric structure overlying the volatile programmable structure.
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申请公布号 |
US2009303794(A1) |
申请公布日期 |
2009.12.10 |
申请号 |
US20080133237 |
申请日期 |
2008.06.04 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
WU CHAO-I |
分类号 |
G11C11/34;H01L21/8247;H01L29/792 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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