| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gallium nitride semiconductor device in which incident light and emitting light are not obstructed by the wirings between electrodes, the semiconductor device having many GaN light emitting elements or GaN light receiving elements formed 2 dimensionally. <P>SOLUTION: A mask 11 for selective growth is formed on a substrate 1 for growth, and an AlN buffer layer 2 is formed in the area where a part of the mask 11 for selective growth is removed. On the AlN buffer layer 2, an undoped GaN layer 3, an n-type GaN layer 4, an active layer 5 and a p-type GaN layer 6 are sequentially laminated and a separation groove A for separating between the elements is formed. A p-side transparent electrode 8 and n electrode 7 of respective GaN semiconductor elements D are formed on a light take-out face or a light receiving face for the semiconductor element D. Part of the wirings 12, 13 connecting respective electrodes are composed of the same material of the p-side transparent electrode 8. <P>COPYRIGHT: (C)2010,JPO&INPIT |
