发明名称 VLSI fabrication processes for introducing pores into dielectric materials
摘要 Porous dielectric layers are produced by introducing pores in pre-formed composite dielectric layers. The pores may be produced after the barrier material, the metal or other conductive material is deposited to form a metallization layer. In this manner, the conductive material is provided with a relatively smooth continuous surface on which to deposit.
申请公布号 US7629224(B1) 申请公布日期 2009.12.08
申请号 US20060606340 申请日期 2006.11.28
申请人 NOVELLUS SYSTEMS, INC. 发明人 VAN DEN HOEK WILLIBRORDUS GERARDUS MARIA;DRAEGER NERISSA S.;HUMAYUN RAASHINA;HILL RICHARD S.;SUN JIANING;RAY GARY
分类号 H01L21/76 主分类号 H01L21/76
代理机构 代理人
主权项
地址