SUBSTRATE PROCESSING APPARATUS

摘要

<P>PROBLEM TO BE SOLVED: To improve the within-wafer uniformity of the density of active species and ions supplied to the surface of a substrate and increase the amount of the active species and ions supplied to the surface of the substrate, when carrying out a substrate processing step by an ALD method. Ž<P>SOLUTION: A substrate processing apparatus includes: a processing chamber for storing a plurality of substrates that are loaded in multilayers; a plasma generating chamber communicating with the processing chamber; a first process gas supply line for supplying a first process gas into the processing chamber; a second process gas supply line for supplying a second process gas into the processing chamber; a third process gas supply line for supplying a third process gas into the plasma generating chamber; a plasma generating device for generating electron source plasma in the plasma generating chamber supplied with the third process gas; an electron beam supply device for extracting electrons from the electron source plasma generated in the plasma generating chamber to irradiate the region between the substrates in the processing chamber; and an exhaust line for exhausting the processing chamber. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž