Embodiments hereof include a photosensing device, comprising an isolation layer; a photodetector layer comprising a plurality of pixels, wherein the photodetector layer is in contact with a first side of the isolation layer, wherein the photodetector layer comprises a laser-processed semiconductor material; and a semiconductor layer disposed on a second side of the isolation layer.
申请公布号
WO2009111327(A3)
申请公布日期
2009.12.03
申请号
WO2009US35538
申请日期
2009.02.27
申请人
SIONYX, INC.;MCCAFFREY, NATHANIAL;CAREY, JAMES;SAYLOR, STEPHEN