| 摘要 |
<p>PURPOSE: A method manufacturing of flash memory device is provided to form the spacer using the nitride oxide film and to reduce data loss in the device formation. CONSTITUTION: The tunnel oxide film(110), the floating gate(120), and the oxide-nitride-oxide film(140) and control gate(160) are formed successively on the semiconductor substrate(100) and the line pattern is formed. The gate oxidation process is processed to form the line pattern and the sidewall oxide layer. The nitride oxide film(200) is formed on the semiconductor substrate including the sidewall oxide layer through the anneal process. The spacer is formed in the side wall of the line pattern including the nitride oxide film. The nitride oxide film is formed through the anneal process of using the NO gas. The gate oxidation process is performed in 800~900°C.</p> |
