发明名称 METHOD FOR THE PRODUCTION OF A LUMINESCENCE DIODE CHIP AND LUMINESCENCE DIODE CHIP
摘要 The invention relates to a method for the production of at least one luminescence diode chip (1), which is provided with a luminescence conversion material (2) comprising at least one luminophore (22). A base body (4) is provided, comprising a layer sequence for the luminescence diode chip (1), the sequence being suitable for emitting electromagnetic radiation. A cover layer (21) is applied to at least one main surface of the base body (41). According to a proposed embodiment, the cover layer (21) can be photostructured. At least one cavity (31, 32) is inserted in the cover layer (21). At least one luminophore (22) is applied to the cover layer (21) and adherence between at least one part of the luminophore (22) and the cover layer (21) is provided or increased. Additionally, a luminescence diode chip (1) produced with said method is provided.
申请公布号 KR20090125197(A) 申请公布日期 2009.12.03
申请号 KR20097022277 申请日期 2008.03.06
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 ALBRECHT TONY;FISCHER HELMUT;WEININGER IRENE
分类号 H01L33/00;H01L33/44;H01L33/50 主分类号 H01L33/00
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