发明名称 CAPACITOR AND METHOD FOR FABRICATING THE SAME
摘要 PURPOSE: A capacitor and a method for manufacturing the same are provided to prevent the collapse and breakage of a storage node by forming a storage with the bottom thicker than the side. CONSTITUTION: In a capacitor and a method for manufacturing the same, a cylindrical storage node is formed on a substrate(11), and the thickness of the bottom is thicker than the sidewall. The cylindrical storage node comprises a first conductive film(18A) forming the sidewall and a second conductive film(19) forming the bottom. The first conductive film comprises silicon or metal, and the second conductive film comprises silicon. A sacrificing layer(15A) having an open part exposing a part of substrate to the outside is formed on the substrate. The second conductive film is formed through a selective epitaxial growth process.
申请公布号 KR20090122560(A) 申请公布日期 2009.12.01
申请号 KR20080048436 申请日期 2008.05.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HAN, KY HYUN
分类号 H01L21/8242;H01L27/108 主分类号 H01L21/8242
代理机构 代理人
主权项
地址