| 摘要 |
<p>PURPOSE: A method for manufacturing a phase-change memory device are provided to solve low deposition property of a metal silicide layer by forming a metal silicide layer before forming a step height for contacting a bottom contact electrode. CONSTITUTION: In a method for manufacturing a phase-change memory device, a PN diode pattern and an inter-layer insulating film are included on a substrate(100). A metal silicide layer(140) is selectively formed on the PN diode pattern selectively, and a step height is formed between the PN diode pattern and the inter-layer insulating film. A spacer is formed on a sidewall of the projected inter-layer insulating film(120a). The bottom electrode contact which is self-aligned by using step height is formed. The inter-layer insulating film is grown up by using the metal silicide layer as a oxide barrier film.</p> |
